Search results for "density [muon]"
showing 10 items of 313 documents
Specific features of the electronic structure of III–VI layered semiconductors: recent results on structural and optical measurements under pressure …
2003
In this paper we review some recent results on the electronic structure of III-VI layered semiconductors and its dependence under pressure, stressing the specific features that differentiate their behaviour from that of tetrahedrally coordinated semiconductors. We will focus on several unexpected results that have led to changes in the image that was currently accepted a few years ago. Intralayer bond angles change under pressure and the layer thickness remains virtually constant or increases. As a consequence, models based in intra- and inter-layer deformation potentials fail in explaining the low pressure nonlinearity of the band gap. Numerical-atomic-orbital/density-functional-theory ele…
Effect of Pressure on Direct Optical Transitions of ?-InSe
2000
We have investigated the effect of hydrostatic pressure on direct optical transitions of the layered semiconductor γ-InSe by photoreflectance (PR) spectroscopy (T = 300 K). In addition, electroreflectance (ER) measurements were performed at ambient pressure. Six structures are resolved in the ER spectra in the energy range from 1.1 to 3.6 eV. The pressure dependence of four of these structures was determined by PR spectroscopy for pressures up to 8 GPa. In order to assign the features observed above the fundamental gap we have carried out band structure calculations for InSe at ambient pressure using a full-potential linear augmented plane wave method. Based on calculated band gap deformati…
Current density maps, magnetizability, and nuclear magnetic shielding tensors of bis-heteropentalenes. III. Thieno-thiophene isomers
2005
Near Hartree–Fock values of the magnetic susceptibility and nuclear magnetic shielding of bis-heteropentalenes consisting of two thiophene units ([2,3-b], [3,2-b], [3,4-b], and [3,4-c] isomers) have been estimated via computational schemes relying on continuous transformation of the origin of the current density within the coupled Hartree–Fock approximation and extended gaugeless Gaussian basis sets. The results are compared with those obtained via London gauge-including orbitals. Maps of streamlines and the modulus of the ring current density induced by a magnetic field normal to the molecular plane are reported for the three isomers of higher symmetry, showing that the intense diamagnetic…
Pressure measurements of TO-phonon anharmonicity in isotopic ZnS
2004
We have measured the dependence on pressure of the line-widths of the TO and LO Raman phonons of β-ZnS. In order to enhance the phenomena observed, and to eliminate possible effects of isotopic disorder, we have measured a nearly isotopically pure crystal, 68 Zn 32 S. The strongly structured pressure effects observed are interpreted on the basis of anharmonic decay and the corresponding two-phonon density of states.
Lattice dynamics of the fluoride scheelite CaZnF4
2000
The lattice dynamics of the fluoride scheelite CaZnF4 have been investigated by means of infrared reflectivity and Raman scattering. The measured phonon modes have been assigned to the various irreducible representations of the point group of the crystal. The phonon dispersion curves, density of states and sound velocities have been calculated within a rigid-ion model based on experimental zone-centre phonons.
First-principles phonon calculations of Fe4+impurity in SrTiO3
2012
The results of hybrid density functional theory calculations on phonons in Sr(Fe(x)Ti(1-x))O(3) solid solution within the formalism of a linear combination of atomic orbitals are presented. The phonon density of states (DOS) calculated for 6.25% Fe(4+) impurities is reported and defect-induced phonon modes are identified. Based on our calculations and group-theoretical analysis, we suggest for the first time an interpretation of experimentally observed Raman- and IR-active modes.
Semiconducting half-Heusler and LiGaGe structure type compounds
2009
Compounds with LiAlSi (half-Heusler) and LiGaGe structure types have been investigated by means of band structure calculations. The LiAlSi structure type is known as the half-Heusler structure type, whereas LiGaGe is a closely related hexagonal variant. A remarkable feature of some XYZ half-Heusler compounds with 8 and 18 valence electrons is, that despite being composed of only metallic elements, they are semiconductors. More than 100 semiconducting compounds within these structure types are known. LiGaGe compounds have an additional degree of freedom, namely the degree of puckering of the layers. These compounds can become semiconducting at a certain degree of puckering. Half-metallic beh…
Differences in Technical Development and Playing Space in Three UEFA Champions Leagues
2021
[Abstract] The analysis of football grows exponentially, with many researchers adopting it as an object of study. The thematic range that addresses it, as well as the different methodologies used, are of a very different nature—physical, psychological, technical, tactical—enriching every day the knowledge, and understanding of the game itself. The objective of this study has been to identify the differences between the different styles of play that lead to becoming the champion of the UEFA Champions League in the last 3 years of the pre-COVID stage, by analyzing the spatial performance developed, the association between the players that make up the different lines of the game system and the…
The temperature dependence of vibronic lineshapes: linear electron-phonon coupling.
2014
We calculate the effect of a linear electron-phonon coupling on vibronic transitions of dye molecules of arbitrary complexity. With the assumption of known vibronic frequencies (for instance from quantum-chemical calculations), we give expressions for the absorption or emission lineshapes in a second-order cumulant expansion. We show that the results coincide with those obtained from generalized Redfield theory if one uses the time-local version of the theory and applies the secular approximation. Furthermore, the theory allows to go beyond the Huang-Rhys approximation and can be used to incorporate Dushinsky effects in the treatment of the temperature dependence of optical spectra. We cons…
Quantum simulation of the spin-boson model with a microwave circuit
2017
We consider superconducting circuits for the purpose of simulating the spin-boson model. The spin-boson model consists of a single two-level system coupled to bosonic modes. In most cases, the model is considered in a limit where the bosonic modes are sufficiently dense to form a continuous spectral bath. A very well known case is the ohmic bath, where the density of states grows linearly with the frequency. In the limit of weak coupling or large temperature, this problem can be solved numerically. If the coupling is strong, the bosonic modes can become sufficiently excited to make a classical simulation impossible. Here, we discuss how a quantum simulation of this problem can be performed …